CS50N20ANH mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.045Ω) l Low Gate Charge (Typical Data:150nC) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit o.
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
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CS50N20 ANH, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various pow.
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